Chinese ‘GaN’ semiconductor technology pioneer Innoscience dragged into IP dispute in US
- USITC has launched an investigation into Innoscience following an IP dispute with American competitor.
- GaN tech has emerged as a promising alternative to silicon when it comes to semiconductor innovation, offering increased efficiency at smaller sizes
One of China’s pioneering gallium nitride (GaN) semiconductor technology companies is being probed by the United States International Trade Commission (USITC), after an intellectual property complaint was filed by an American competitor.
USITC launched an investigation into Innoscience, which makes gallium nitride-on-silicon (GaN-on-Si) semiconductor devices, last week after Efficient Power Conversion (EPC) accused the Chinese firm of infringing four patents relating to GaN transistor design and manufacturing.
Gallium nitride is a promising alternative to traditional silicon-based semiconductor technology. EPC filed its complaint in May to USITC and a US District Court in California.
“The investigations and lawsuits filed by EPC are inconsistent with the facts, and the motives and purposes are impure,” China-based Innoscience said at the time of EPC’s filings in May, adding that it would take legal measures to defend itself.
“We think this move [by EPC] is an illegal [step] ... to destroy Innoscience’s competitive advantage,” the company added.
Innoscience did not respond to a request for comment on Monday about USITC’s decision to launch an investigation into the matter.
Zhuhai-headquartered Innoscience was founded in 2015 by Luo Weiwei, who, according to Chinese media, previously worked as a scientist for the National Aeronautics and Space Administration (Nasa). In 2018, Innoscience won first prize in an entrepreneurial and innovation competition hosted by several Chinese ministry-level agencies.
