Chinese breakthrough in gallium oxide semiconductor may deliver edge amid US export ban
- Gallium oxide has significant performance advantages but has been notoriously difficult to process
- Proposed casting method is relatively simple and shorter, making it suitable for automated control and aiding future production
Semiconductors have evolved over several decades, transitioning from elemental materials such as silicon and germanium, to compound materials such as gallium arsenide and indium phosphide, and more recently to wide-gap materials such as silicon carbide and gallium nitride.
Gallium oxide is commonly known as the fourth-generation ultra wide band gap semiconductor. It can withstand a strong electric field, process stable physical and chemical properties and it consumes little power.
Band gap is a measure of the energy needed to free electrons within semiconductor materials. A larger value implies a greater resistance to high voltage, enabling higher voltage handling capabilities.
Compared to widely used wide band gap materials, such as gallium nitride and silicon carbide, gallium oxide has significant performance advantages. However, it has been notoriously difficult to process.
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China restricts critical metal exports following Western semiconductor curbs in latest trade war
In August last year, the US Commerce Department’s Bureau of Industry and Security imposed an export ban on advanced semiconductors, including gallium oxide, citing national security concerns.
